| PART |
Description |
Maker |
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| CMLDM7002A |
SURFACE MOUNT PICOmini DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET 280 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor, Corp.
|
| MGSF3455VT1 MGSF3455VT1_D ON1910 MGSF3455VT1-D ON1 |
From old datasheet system
P-CHANNEL ENHANCEMENT?ODE
P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
Low Rds(on) Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| 2SK226 2SK227 2SK225 |
SILICON N-CHANNEL ENHANCEMENT MOSFET
|
HITACHI[Hitachi Semiconductor]
|
| IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE
|
TRSYS
|
| NTP22N06 |
N?Channel Enhancement?Mode Silicon Gate
|
ON Semiconductor
|
| MTP12N06EZL |
OBSOLETE - N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| IRF820 IRF823 IRF821 |
N-CHANNEL Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC
Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| CMNDM8001 |
SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
|
Central Semiconductor Corp
|
| CTLDM7120-M563 |
SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
|
Central Semiconductor Corp
|
| CXDM4060N |
SURFACE MOUNT SILICON N-CHANNEL ENHANCEMENT-MODE MOSFET
|
Central Semiconductor Corp
|
| CEDM8001 |
SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
|
Central Semiconductor Corp
|
